BULLETIN
of the
POLISH ACADEMY of SCIENCES TECHNICAL SCIENCES |
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Volume
57, Issue 2, June 2009
Varia |
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Aims&Scope, Subscription | Editors | Authors' guide | to read PDF files | mirror: http://fluid.ippt.gov.pl/~bulletin/ |
pp 139 - 146 |
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Surface smoothness improvement of HgCdTe layers grown by MOCVD |
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P. MADEJCZYK, A. PIOTROWSKI, K. KLOS, W. GAWRON, A. ROGALSKI, J. RUTKOWSKI, and W. MROZ |
This paper presents results of experimental efforts pointed towards morphology improvement of HgCdTe layers grown by MOCVD on GaAs substrates. Selected growth parameters on morphology state are presented. The substrate issues like its quality and crystallographic orientation have been discussed. Also influence of HgCdTe layer thickness on its surface roughness is described. It is shown that extensive characterization studies using accessible equipments and methods: atomic force microscopy (AFM), secondary electron microscopy (SEM), laser scatterometer and Nomarski microscopy, have provided invaluable information about the correlation between defect formation and the influence of specific growth parameters. |
Key words: |
HgCdTe MOCVD growth, layer morphology, surface smoothness |
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Copyright
® Bulletin of the Polish Academy of Sciences: Technical Sciences
8 July 2009 |
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