Grzegorz Maciejewski, Ph.D., D.Sc.

Institute of Fundamental Technological Research 

Polish Academy of Sciences


Pawińskiego 5b, 02-106 Warsaw, Poland

room 417

tel. (48 22) 8261281 ext. 321,

fax (48 22) 8269815

email:  gmaciej *at*



Ph.D. 2003, IPPT Warsaw

D.Sc. 2012, IPPT Warsaw





Refereed publications:


21. G. Maciejewski and Z. Mróz,

Optimization of functionally gradient materials in valve design under cyclic thermal and mechanical loading,

Computer Assisted Methods in Engineering and Science, vol. 20 (2), 99-112, 2013.   link


20. S. Stupkiewicz, G. Maciejewski, and H. Petryk,

Elastic micro-strain energy of austenite-martensite interface in NiTi,

Modelling and Simulation in Materials Science and Engineering, vol. 20 (3), 035001, 2012.   link


19. H. Petryk, S. Stupkiewicz, and G. Maciejewski

Interfacial energy and dissipation in martensitic phase transformations.

Part II: Size effects in pseudoelasticity,

Journal of the Mechanics and Physics of Solids, vol. 58 (3), 373-389, 2010.   link


18. A. Czyzak, J. Z. Domagala, G. Maciejewski, and Z.R. Zytkiewicz

X-ray diffraction micro-imaging of strain in laterally overgrown GaAs layers.

Part I: analysis of a single GaAs stripe,

Applied Physics A, vol. 91 (4), 601-607, 2008.   link


17. S. Kret, P. Dłużewski, A. Szczepańska, M. Żak, R. Czernecki, M. Krysko, M. Leszczyński, and G. Maciejewski,

Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal

revealed by transmission electron microscopy and X-ray diffraction,

Nanotechnology, vol. 18 (46), 465707, 2007.  link


16. G. Maciejewski,

Plastic strain field caused by dislocations,

Physica B: Condensed Matter, vol. 401-402, 699-701, 2007.  link


15. S. Stupkiewicz, G. Maciejewski, and H. Petryk,

Low-energy morphology of the interface layer between austenite and twinned martensite,

Acta Materialia, vol. 55 (18), 6292-6306, 2007.  link


14. G. Maciejewski, M. Sarzyński, J. Z. Domagala, and M. Leszczyński,

A new method of strain determination in partially relaxed thin films,

Physica Status Solidi C, vol. 4 (8), 3048-3055, 2007.  link


13. G. Maciejewski, S. Kret, and P. Ruterana,

Piezoelectric field around threading dislocation in GaN determined on the basis of high-resolution transmission electron microscopy image,

Journal of Microscopy, vol. 223 (3), 212-215, 2006.  PDF


12. H. Petryk, S. Stupkiewicz and G. Maciejewski,

Modeling of austenite/martensite laminates with interfacial energy effect,

Proc. IUTAM Symp. on Size Effects on Material and Structural Behaviour at Micron- and Nano-scales, 151-162. Springer, 2006.  link


11. G. Maciejewski, S. Stupkiewicz and H. Petryk,

Elastic micro-strains at the austenite-twinned martensite interface,

Archives of Mechanics, vol. 57 (4), 277-297, 2005.  PDF


10. P. Ruterana, P. Singh, S. Kret, G. Jurczak, G. Maciejewski, P. Dluzewski, H. K. Cho, R. J. Choi, H. J. Lee and E. K. Suh,

Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures,

Physica Status Solidi B, vol. 241 (12), 2735-2738, 2004.  link


9. G. Maciejewski, G. Jurczak, S. Kret, P. Dłużewski and P. Ruterana,

Evidence of strong indium segregation in MOCVD InxGa1-xN/GaN quantum layers,

MRS Proceedings , vol. 798, 811-816, 2004.  link


8. G. Jurczak, G. Maciejewski, S. Kret, P. Dłużewski and P. Ruterana,

Modeling of indium rich clusters in MOCVD InxGa1-xN/GaN multilayers,

Journal of Alloys and Compounds, vol. 382 (1-2), 10-16, 2004.  link


7. G. Maciejewski, P. Dłużewski,

Nonlinear finite element calculations of residual stresses in dislocated crystals,

Computational Materials Science, vol. 30 (1-2), 44-49, 2004.  link


6. P. Dłużewski, G. Maciejewski, G. Jurczak, S. Kret and J. Y. Laval,

Nonlinear FE analysis of residual  stresses induced by dislocations in heterostructures,

Computational Materials Science, vol. 29 (3), 379-395, 2004.  link


5. S. Kret, G. Maciejewski, P. Dłużewski, P. Ruterana, N. Grandjean and B. Damilano,

Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers,

Materials Chemistry and Physics, vol. 81 (2-3), 273-276, 2003.  link


4. P. Ruterana, S. Kret, A. Vivet, G. Maciejewski and P. Dluzewski,

Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers,

Journal of Applied Physics, vol. 91 (11), 8979-8985, 2002.  link


3. P. Dłużewski, G. Jurczak, G. Maciejewski, S. Kret, P. Ruterana and G. Nouet,

Finite element simulation of residual stresses in epitaxial layers,

Materials Science Forum, vol. 404-405, 141-146, 2002.  link


2. S. Kret, P. Dluzewski, G. Maciejewski , V. Potin, J. Chen, P. Ruterana and G. Nouet,

The dislocations of low-angle grain boundaries in GaN epilayers: a HRTEM quantitative study and finite element stress state calculation,

Diamond and Related Materials, vol. 11 (3-6), 910-913, 2002.  link


1. P. Dłużewski, G. Maciejewski,

Thermodynamics of orientation discontinuity surface: Small misorientation approach,

Archive of Mechanics, vol. 53 (2), 105-122, 2001.  PDF



PhD thesis:


The FE method applied to the determination of residual stress distribution in heterostructures (PDF   in polish).





Research interest:

· Continuum and atomistic dislocation modeling

· Numerical modeling of epitaxial structures at the nanoscale

· Interfaces in shape memory alloys

· Computational modeling of inelastic behavior of solids