POLISH ACADEMY of SCIENCES
TECHNICAL SCIENCES
| BULLETIN
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POLISH ACADEMY of SCIENCES TECHNICAL SCIENCES |
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| Volume 53, Issue 2, June 2005 | ||||
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| Aims&Scope, Subscription | Editors | Authors' guide | Vol 53-2 | mirror: http://fluid.ippt.gov.pl/~bulletin/ |
| pp 113 - 122 |
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High power QW SCH InGaAs/GaAs lasers for 980-nm band |
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| M. BUGAJSKI , B. MROZIEWICZ, K. REGINSKI, J. MUSZALSKI, K. KOSIEL, M. ZBROSZCZYK, T. OCHALSKI, T. PIWONSKI, D. WAWER, A. SZERLING, E. KOWALCZYK, H. WRZESINSKA, and M. GORSKA |
| Strained layer
InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the order of Jth ≈ 280 A/cm2 (for the resonator length L = 700 um) and differential efficiency η= 0.40 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations of above parameters, obtained by numerical modelling of devices were Jth ≈ 210 A/cm and η = 0.47 W/A from one mirror, respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation after 1500 hrs of CW operation at 35oC heat sink temperature at the constant optical power (50 mW) conditions. |
| Keywords: |
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laser diodes, strained-layer semiconductor lasers |
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| Aims&Scope, Subscription | Editors | Authors' guide | Vol 53-2 |
| Copyright
- Bulletin of the Polish Academy of Sciences: Technical Sciences
18 July 2005, site prepared by KZ |
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